Simulation of the example diode

It seems that my setting is correct. Thus it is strange why the results differ(In fact, the built-in voltage has already differed). Is it that my test example is non-physics? And Crosslight and DEVSIM solves different mathematic equations? The followings are the settings for the simulated test example:

Domain: [0,5e-6] x [0,5.5e-6] for Si
Doping: [0,2.5e-6] x [4e-6,5.5e-6] as acceptor(2e20), other parts doping as donor(2e20).
contacts: [0,1.5e-6] x [5.5e-6,5.5e-6] (0 V) and [0,5e-6] x [0,0] (-2 V).
Relative permittivity: 11.9.
Mobility: 0.13864.
tau_n=tau_p = 1e-8.
ni = 1.08e10.