Hello everyone,
I’m currently building a transistor model with an IGZO channel using DEVSIM.
While reading the manuals and studying the example codes shared by the community, I haven’t seen any equations that explicitly describe the relationship between the “Electrons” and “Holes” variables and the electrostatic potential or quasi-Fermi levels.
From what I understand, these models use the equilibrium solutions of “IntrinsicElectron” and “IntrinsicHole” under the OnlyPotential condition as the initial values for “Electrons” and “Holes” in the coupled Poisson and drift-diffusion equations. However, during the subsequent simulation steps, the “Electrons” and “Holes” variables themselves are not directly linked to the electrostatic potential through any equations.
Why is this approach valid?
Thank you in advance for your help!